PART |
Description |
Maker |
SPP80N06S2-09 SPB80N06S2-09 |
Low Voltage MOSFETs - TO220/263; 80 A; 55 V; NL; 9.1 mOhm OptiMOS Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
SPP80N06S2-08 SPB80N06S2-08 SPI80N06S2-08 |
Low Voltage MOSFETs - TO220/263/262; 80 A; 55V; NL; 8 mOhm OptiMOS Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
SPB100N04S2L-03 SPP100N04S2L-03 |
Low Voltage MOSFETs - TO220/263; 100A; 40V; LL;3.3mohm OptiMOS Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
SPP80N04S2L-03 SPB80N04S2L-03 |
Low Voltage MOSFETs - TO220/263; 80A; 40V; LL; 3.4mOhm OptiMOS Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
SPP80N06S2-07 SPB80N06S2-07 |
Low Voltage MOSFETs - TO220/263/262; 80A; 55V; NL; 6.6mOhm N-Channel OptiMOS Power Transistor
|
Infineon
|
IPB04N03LA IPP04N03LA IPI04N03LA |
OptiMOS 2 Power-Transistor Low Voltage MOSFETs - OptiMOS? Power MOSFET, 25V, TO220, RDSon = 4.2mOhm, 80A, LL OptiMOS®2 - Power packages
|
Infineon Technologies A... INFINEON[Infineon Technologies AG]
|
SPB100N06S2L-05 SPP100N06S2L-05 |
Low Voltage MOSFETs - TO220/263; 100 A; 55V; LL; 4,7 mOhm OptiMOS Power-Transistor Silver Mica Capacitor; Capacitance:15pF; Capacitance Tolerance: /- 5%; Series:CD6; Voltage Rating:500VDC; Capacitor Dielectric Material:Mica; Termination:Radial Leaded; Lead Pitch:4.4mm; Leaded Process Compatible:No RoHS Compliant: No
|
INFINEON[Infineon Technologies AG]
|
SPB100N03S2L-03 SPP100N03S2L-03 SPI100N03S2L-03 |
100 A, 30 V, 0.0037 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA OptiMOS Power-Transistor 的OptiMOS功率晶体 Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 2.7mOhm, 100 A, LL Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 3mOhm, 100A, LL
|
INFINEON[Infineon Technologies AG]
|
SPB100N03S2-03 SPP100N03S2-03 SPI100N03S2-03 |
OptiMOS Power-Transistor 的OptiMOS功率晶体 Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 3.3mOhm, 100A, NL Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 3.0mOhm, 100A, NL
|
INFINEON[Infineon Technologies AG]
|
KMD7D5P40QA |
Low Voltage MOSFETs
|
Korea Electronics (KEC)
|
IXFN38N100Q2 |
N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr 38 A, 1000 V, N-CHANNEL, Si, POWER, MOSFET Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS, Corp. IXYS[IXYS Corporation]
|